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ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
FEATURES
* SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz
Noise Figure, NF (dB)
NE321000
NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT
VDS = 2 V f = 12 GHz 15 GA 14 13 2.0 1.5 1.0 0.5 NF 0 10 20 30 12 11
* GATE LENGTH: 0.2 m * GATE WIDTH: 160 m
DESCRIPTION
NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial, industrial and space applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance.
Drain Current, ID (mA)
ELECTRICAL CHARACTERISTICS
(TA = 25C)
PART NUMBER PACKAGE OUTLINE
SYMBOLS NF GA1 IDSS VP gM IGSO PARAMETERS AND CONDITIONS Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GHz Associated Gain, VDS = 2 V, ID = 10 mA, f = 12 GHz Saturated Drain Current, VDS = 2 V, VGS = 0 V Pinch-off Voltage, VDS = 2 V, ID = 100 A Transconductance, VDS = 2 V, ID = 10 A Gate to Source Leakage Current, VGS = -3 V UNITS dB dB mA V mS A 12.0 15 -0.2 40 MIN
NE321000 CHIP
TYP 0.35 13.5 40 -0.7 55 0.5 10 70 -2.0 MAX 0.45
Note: 1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects per 10 samples.
California Eastern Laboratories
Associated Gain, GA (dB)
* HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz
NE321000 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VDS VGS IDS IG PT2 TCH TSTG PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature UNITS V V mA A mW C C RATINGS 4.0 -3.0 IDSS 100 200 175 -65 to +175
RECOMMENDED OPERATING CONDITIONS (TA = 25C)
PART NUMBER SYMBOLS VDS ID PIN PARAMETERS Drain to Source Voltage Drain Current Input Power V mA dBm 1 5 - NE321000 UNITS MIN TYP MAX 2 10 - 3 15 0
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Chip mounted on Alumina heat sink.
TYPICAL PERFORMANCE CURVES
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
250
(TA = 25C) MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. DRAIN CURRENT
24
Maximum Stable Gain, MSG (dB) Maximum Available Gain, MAG (dB) Forward Insertion Gain, |S21S|2 (dB)
Total Power Dissipation, (PT) mW
VDS = 2 V ID = 10 mA 20 MSG.
200
150
16
100
12
(S21S)2
50
8
4
0
50
100
150
200
250
1
2
4
6
8 10
14
20
30
Ambient Temperature, TA (C)
Frequency, f (GHz)
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
100
DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE
VDS = 2 V
Drain Current, IDS (mA)
Drain Current, IDS (mA)
80
60
60
40
VGS = 0 V 40 -0.2 V 20 -0.4 V -0.6 V
20
0
0 1.0 2.0
-2.0
-1.0
0
Drain to Source Voltage, VDS (V)
Gate to Source Voltage, VGS (V)
NE321000 NOISE PARAMETERS
VDS = 2 V, ID = 10 mA FREQ.(GHz) NF MIN (dB) GA (dB) MAG 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 0.21 0.22 0.24 0.26 0.28 0.31 0.38 0.45 0.52 0.59 0.66 0.72 0.79 19.5 17.6 15.9 14.6 13.5 12.7 12.1 11.6 11.3 11.2 11.1 11.2 11.2 0.94 0.87 0.82 0.77 0.73 0.69 0.67 0.64 0.63 0.62 0.61 0.62 0.63 opt ANG (DEG) 3.7 8.2 13.3 18.8 24.8 31.4 38.4 45.9 53.9 62.4 71.4 80.8 90.8 0.31 0.31 0.32 0.32 0.32 0.31 0.31 0.30 0.29 0.28 0.27 0.25 0.23 RN/50
CHIP DIMENSIONS (Units in m)
NE321000 (CHIP)
58
38
ORDERING INFORMATION
PART NUMBER NE321000 QUALITY GRADE Standard (Grade D)
27
56
38
38
SOURCE
63
DRAIN
SOURCE
69
GATE
36
61 26 300
56
38
Bonding Pad Area
Chip Thickness: 140 m typical
Note: All dimensions are typical unless otherwise specified
38
224
300
NE321000 TYPICAL SCATTERING PARAMETERS
1.0 0.5
(TA = 25C)
90 120 -9 60
S11 42 GHz S22 42 GHz
2.0
-11.5 150 30 -15
0.2
5.0
S21 2 GHz
0.0 0.0 0.2 0.5 1.0 2.0 5.0
-21
180
S12 2 GHz
2
0
S22 2 GHz
-0.2
S11 2 GHz
-5.0
-150
S21 42 GHz
S12 42 GHz
8
-30
11.5
-0.5 -1.0
-2.0
-120 14 -90
-60
VDS = 2 V, IDS = 10 mA
FREQUENCY (GHz) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 Notes: 1. Gain Calculations:
MAG = |S21| |S12|
S11 MAG 0.979 0.952 0.918 0.876 0.806 0.756 0.704 0.652 0.599 0.547 0.500 0.459 0.425 0.398 0.380 0.370 0.365 0.365 0.373 0.388 0.412 0.444 0.485 0.532 0.584 0.636 0.681 0.723 0.752 0.771 0.771 0.760 0.749 0.722 0.719 0.686 0.630 0.689 0.719 0.729 0.743 ANG -15.88 -24.04 -32.49 -41.18 -53.05 -62.14 -71.41 -81.35 -91.60 -102.52 -113.97 -126.08 -138.72 -151.46 -164.21 -176.46 171.42 159.53 147.72 136.67 126.56 117.17 108.32 100.27 93.50 87.38 81.46 76.25 71.46 67.12 62.95 59.66 57.15 56.15 53.23 49.28 48.81 49.24 41.34 35.32 30.50 MAG 4.700 4.658 4.602 4.536 4.557 4.400 4.241 4.086 3.925 3.757 3.591 3.418 3.241 3.069 2.904 2.750 2.606 2.476 2.358 2.252 2.146 2.042 1.936 1.819 1.697 1.584 1.471 1.361 1.253 1.158 1.074 1.003 0.953 0.909 0.882 0.870 0.825 0.734 0.712 0.694 0.686
S21 ANG 161.37 152.38 143.31 134.13 123.19 114.52 105.89 97.18 88.59 80.01 71.67 63.45 55.38 47.70 40.36 33.25 26.43 19.76 13.28 6.48 -0.14 -6.88 -13.88 -20.82 -27.48 -33.95 -40.30 -46.28 -51.33 -55.59 -58.96 -61.95 -63.99 -66.52 -68.19 -71.76 -77.56 -79.13 -79.03 -80.94 -83.24 MAG 0.030 0.045 0.059 0.072 0.087 0.097 0.107 0.116 0.125 0.132 0.140 0.146 0.153 0.160 0.166 0.174 0.183 0.194 0.206 0.220 0.235 0.250 0.268 0.284 0.297 0.309 0.322 0.332 0.340 0.349 0.361 0.382 0.408 0.428 0.453 0.495 0.504 0.441 0.466 0.498 0.534
S12 ANG 0.10 75.46 70.71 65.92 59.37 55.24 51.14 47.15 43.28 39.42 36.01 32.77 29.59 26.77 24.33 22.07 19.95 17.75 15.55 12.96 10.24 7.23 3.56 -0.73 -5.09 -9.24 -13.52 -17.90 -21.67 -24.79 -27.19 -29.77 -33.01 -37.73 -40.45 -46.46 -57.77 -60.27 -59.22 -62.84 -67.39 MAG 0.631 0.618 0.598 0.574 0.517 0.492 0.463 0.428 0.390 0.351 0.313 0.279 0.247 0.221 0.206 0.195 0.188 0.187 0.183 0.182 0.187 0.198 0.226 0.268 0.320 0.384 0.449 0.514 0.571 0.618 0.654 0.672 0.677 0.685 0.695 0.672 0.634 0.683 0.703 0.706 0.710
S22 ANG -11.44 -16.89 -22.57 -28.45 -37.47 -42.71 -47.93 -53.46 -59.62 -66.37 -74.06 -83.24 -93.60 -105.60 -118.23 -131.11 -144.12 -156.14 -168.03 178.67 163.83 146.97 130.10 114.53 101.53 91.41 83.86 77.47 72.94 69.72 67.81 65.90 64.49 64.23 61.49 57.54 56.85 54.33 43.64 32.69 21.48
K .1722 .2556 .3306 .4049 .4996 .5640 .6273 .6880 .7465 .8071 .8563 .9044 .9466 .9833 1.014 1.035 1.050 1.054 1.055 1.046 1.033 1.020 .9985 .9814 .9648 .9449 .9259 .9078 .8978 .8916 .8963 .9002 .8963 .8730 .8756 .8782 .8353 .8086 .9024 .9503 .9733
S21 (dB) 13.44 13.36 13.26 13.13 13.17 12.87 12.55 12.23 11.88 11.50 11.10 10.68 10.21 9.74 9.26 8.79 8.32 7.88 7.45 7.05 6.63 6.20 5.74 5.20 4.59 3.99 3.35 2.68 1.96 1.27 -.42 .03 -.42 -.83 -1.09 -1.21 -1.67 -2.69 -2.95 -3.17 -3.27
MAG1 (dB) 21.95 20.15 18.92 17.99 17.19 16.57 15.98 15.47 14.97 14.54 14.09 13.69 13.26 12.83 11.69 10.85 10.16 9.63 9.16 8.79 8.45 8.25 8.59 8.07 7.57 7.10 6.60 6.13 5.67 5.21 3.68 4.19 3.68 3.27 2.89 2.45 2.14 2.21 1.84 1.44 1.09
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available gain MSG = Maximum Stable Gain 2. S Parameters include bond wires. Gate : Total 1 wire(s), 1 per bond pad,(426 m) long each wire ; 131 m height. Drain : Total 1 wire(s), 1 per bond pad,(409 m) long each wire ; 214 m height. Source : Total 2 wire(s), 2 per side,(665 m) long each wire ; 315 m height. Wire : .001in (25.4 m) Dia., Gold.
NE321000 TYPICAL SCATTERING PARAMETERS
1.0
120
(TA = 25C)
90 -9 60
0.5
S11 42 GHz
0.2
2.0
-11.5 150 -15
S22 42 GHz
5.0
30
S21 2 GHz
0.0
-21
180
S12 2 GHz
2
0
S22 2 GHz
-0.2
-5.0
S11 2 GHz
-150 8
S21 42 GHz
S12 42 GHz
-30
11.5
-0.5
-2.0
-120 -60 14 -90
-1.0
VDS = 2 V, IDS = 20 mA
FREQUENCY (GHz) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 S11 MAG 0.971 0.936 0.892 0.840 0.758 0.702 0.645 0.591 0.538 0.487 0.444 0.407 0.378 0.355 0.342 0.336 0.336 0.338 0.350 0.367 0.393 0.426 0.467 0.516 0.570 0.623 0.669 0.712 0.745 0.763 0.764 0.753 0.739 0.713 0.710 0.676 0.621 0.681 0.717 0.722 0.736 ANG -17.52 -26.34 -35.36 -44.45 -56.82 -65.96 -75.18 -84.98 -95.11 -105.94 -117.44 -129.71 -142.53 -155.53 -168.46 179.30 167.17 155.65 144.19 133.64 124.22 115.44 107.05 99.57 93.25 87.32 81.70 76.64 71.90 67.71 63.52 59.97 57.65 56.94 54.09 50.40 50.50 50.65 42.74 36.64 32.15 MAG 5.909 5.803 5.665 5.505 5.430 5.169 4.915 4.673 4.436 4.204 3.984 3.770 3.558 3.356 3.168 2.993 2.831 2.684 2.551 2.434 2.314 2.200 2.086 1.958 1.825 1.705 1.585 1.470 1.357 1.257 1.173 1.101 1.044 0.993 0.963 0.943 0.891 0.796 0.776 0.753 0.735 S21 ANG 159.51 149.78 140.08 130.44 119.35 110.60 102.02 93.54 85.26 77.11 69.25 61.52 53.95 46.74 39.82 33.08 26.62 20.28 14.13 7.60 1.30 -5.19 -11.91 -18.67 -25.00 -31.27 -37.39 -43.19 -48.18 -52.43 -55.92 -59.01 -61.42 -63.93 -65.83 -69.59 -75.50 -76.38 -77.41 -79.78 -82.08 S12 MAG 0.027 0.040 0.052 0.064 0.077 0.087 0.096 0.105 0.114 0.123 0.131 0.140 0.148 0.157 0.167 0.177 0.188 0.201 0.214 0.229 0.244 0.260 0.278 0.293 0.306 0.317 0.329 0.338 0.346 0.354 0.365 0.386 0.411 0.429 0.454 0.495 0.505 0.444 0.470 0.502 0.540 ANG 80.79 76.70 72.46 68.23 62.59 59.09 55.73 52.42 49.16 45.79 42.69 39.68 36.58 33.53 30.71 27.99 25.26 22.47 19.58 16.30 13.05 9.40 5.31 0.68 -3.99 -8.37 -12.88 -17.40 -21.20 -24.36 -26.95 -29.64 -32.78 -37.54 -40.15 -45.93 -57.01 -59.39 -58.62 -62.02 -66.72 MAG 0.547 0.535 0.515 0.492 0.434 0.412 0.387 0.357 0.326 0.292 0.259 0.228 0.198 0.173 0.159 0.149 0.144 0.145 0.144 0.146 0.154 0.170 0.203 0.250 0.305 0.370 0.435 0.500 0.556 0.602 0.638 0.655 0.658 0.665 0.674 0.650 0.618 0.672 0.692 0.694 0.698 S22 ANG -10.86 -15.95 -21.15 -26.46 -34.92 -39.33 -43.65 -48.18 -53.36 -59.13 -66.01 -74.73 -84.91 -97.54 -111.74 -126.18 -141.58 -155.37 -169.00 175.97 159.66 141.69 124.84 109.99 97.78 88.43 81.48 75.71 71.59 68.66 67.01 65.37 64.16 64.34 61.90 58.17 58.16 55.59 44.78 34.03 22.74 K .218 .317 .410 .496 .601 .668 .734 .791 .842 .889 .929 .959 .989 1.013 1.024 1.034 1.039 1.037 1.034 1.024 1.014 1.002 .986 .973 .961 .947 .933 .919 .910 .906 .909 .912 .908 .883 .884 .885 .832 .808 .889 .940 .965 S21 (dB) 15.43 15.27 15.06 14.82 14.70 14.27 13.83 13.39 12.94 12.47 12.01 11.53 11.02 10.52 10.02 9.522 9.039 8.576 8.134 7.726 7.287 6.848 6.386 5.836 5.225 4.634 4.001 3.346 2.652 1.987 1.386 .836 .374 -.061 -.328 -.510 -1.002 -1.982 -2.203 -2.464 -2.674 MAG1 (dB) 23.40 21.62 20.37 19.35 18.48 17.74 17.09 16.48 15.90 15.34 14.83 14.30 13.81 12.60 11.83 11.15 10.57 10.07 9.639 9.318 9.048 8.994 8.753 8.249 7.755 7.307 6.828 6.384 5.935 5.503 5.070 4.552 4.049 3.645 3.266 2.799 2.466 2.535 2.178 1.761 1.339
Notes: 1. Gain Calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available gain MSG = Maximum Stable Gain 2. S Parameters include bond wires. Gate : Total 1 wire(s), 1 per bond pad,(426 m) long each wire ; 131 m height. Drain : Total 1 wire(s), 1 per bond pad,(409 m) long each wire ; 214 m height. Source : Total 2 wire(s), 2 per side,(665 m) long each wire ; 315 m height. Wire : .001in (25.4 m) Dia., Gold.
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
NE321000 NE321000 NONLINEAR MODEL SCHEMATIC
Ldx DRAIN Lgx GATE 0.39nH Lsx 0.13nH Q1 0.39nH
CGSx 0.02pF
CDSx 0.02PF
SOURCE
FET NONLINEAR MODEL PARAMETERS (1)
Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC Q DELTA VBI IS N RIS RID TAU CDS RDB CBS CGSO CGDO DELTA1 DELTA2 FC VBR Q1 -0.774 0 8 0.102 0.085 0.08 2.5 0.8 0.6 1e-14 1 0 0 2e-12 0.08e-12 5000 1e-9 0.21e-12 0.025e-12 0.3 0.2 0.5 Infinity Parameters RG RD RS RGMET KF AF TNOM XTI EG VTOTC BETATCE FFE Q1 3 3 3 0 0 1 27 3 1.43 0 0 1
UNITS
Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps
MODEL RANGE Frequency: 2 to 28 GHz Bias: VDS = 1 V to 3 V, ID = 1 mA to 30 mA Date: 10/99
(1) Series IV Libra TOM Model
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM 02/20/2001 DATA SUBJECT TO CHANGE WITHOUT NOTICE

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